78M6618-IMR View Datasheet(PDF) - Teridian Semiconductor Corporation
Part Name
Description
Manufacturer
78M6618-IMR Datasheet PDF : 32 Pages
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78M6618 Data Sheet
2.5 Timing Specifications
2.5.1 Flash Memory
Table 20: Flash Memory Timing Specifications
Parameter
Flash write cycles
Flash data retention
Flash data retention
Flash byte write operations between
page or mass erase operations
Write Time per Byte
Page Erase (1024 bytes)
Mass Erase
Condition
-40°C to +85°C
25°C
85°C
Min Typ
20,000
100
10
2.5.2 EEPROM Interface
Table 21: EEPROM Interface Timing
Parameter
Write Clock frequency (I2C)
Write Clock frequency (3-wire)
Condition
Min Typ
CKMPU = 4.9152 MHz,
78
Using interrupts
CKMPU = 4.9152 MHz,
150
bit-banging DIO4/5
CKMPU = 4.9152 MHz
500
2.5.3 RESET
Table 22: RESET Timing
Parameter
Reset pulse width
Reset pulse fall time
Condition
Min Typ
5
1 Guaranteed by design; not production tested.
2.5.4 RTC
Parameter
Range for date
Table 23: RTC Range
Condition
Min Typ
2000
DS_6618_005
Max Unit
Cycles
Years
Years
2
Cycles
42
µs
20
ms
200
ms
Max Unit
kHz
kHz
kHz
Max
11
Unit
µs
µs
Max Unit
2255 year
22
Rev. 1.4
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