DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

74VHCT373A_99 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
74VHCT373A_99 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
74VHCT373A
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Conditions
Value
Un it
TA = 25 oC
-40 to 85 oC
Min. Typ . Max. Min . Max.
CIN Input Capacitance
4
10
10
pF
COUT Output Capacitance
9
pF
CPD Power Dissipation
Capacitance (note 1)
14
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD VCC fIN + ICC/8 (per Latch)
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol
Parameter
Test Conditions
V CC
( V)
Value
TA = 25 oC
Min. Typ. Max.
-40 to 85 oC
Min . Max.
Un it
VOLP Dynamic Low Voltage
5.0
VOLV Quiet Output (note 1, 2)
0.6 0.9
-0.9 -0.6
VIHD Dynamic High Voltage
5.0
CL = 50 pF
2.0
V
Input (note 1, 3)
VILD Dynamic Low Voltage
5.0
0.8
Input (note 1, 3)
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
TEST CIRCUIT
TEST
tPLH, tPHL
tPZL, tPLZ
tPZH, tPHZ
CL = 15/50 pF or equivalent (includes jig and probe capacitance)
RL = R1 = 1Korequivalent
RT = ZOUT of pulse generator (typically 50)
SW IT CH
Open
VCC
GND
5/10
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]