74HCT165DB View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

74HCT165DB

8-bit parallel-in/serial out shift register

NXP Semiconductors. 

NXP Semiconductors

74HC165; 74HCT165

8-bit parallel-in/serial out shift register

Table 7. Dynamic characteristics …continued

GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit, see Figure 12

Symbol Parameter Conditions

25 °C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min Typ Max Min Max

Min

Max

CPD

power

per package;

[3] - 35 -

-

-

-

- pF

dissipation VI = GND to VCC − 1.5 V

capacitance

[1] tpd is the same as tPHL and tPLH.

[2] tt is the same as tTHL and tTLH.

[3] CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi + Σ (CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

Σ (CL × VCC2 × fo) = sum of outputs;

CL = output load capacitance in pF;

VCC = supply voltage in V.

12. Waveforms

VI

CP or CE input

GND

VOH

Q7 or Q7 output

VOL

1/fmax

VM

tW

tPHL

VM

tTHL

tPLH

tTLH

mna987

Fig 7.

Measurement points are given in Table 8.

VOL and VOH are typical voltage output levels that occur with the output load.

The clock (CP) or clock enable (CE) to output (Q7 or Q7) propagation delays, the clock pulse width, the

maximum clock frequency and the output transition times

74HC_HCT165_3

Product data sheet

Rev. 03 — 14 March 2008

© NXP B.V. 2008. All rights reserved.

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