74AHC30PW View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
74AHC30PW Datasheet PDF : 14 Pages
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NXP Semiconductors
74AHC30; 74AHCT30
8-input NAND gate
Table 7. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C
Min Typ[1] Max Min
Max
CPD
power
fi = 1 MHz;
dissipation VI = GND to VCC
capacitance
[3] -
10
-
-
-
74AHCT30; VCC = 4.5 V to 5.5 V
tpd
propagation A, B, C, D, E, F, G, H to Y; [2]
delay
see Figure 6 and 7
CL = 15 pF
CL = 50 pF
CPD
power
fi = 1 MHz;
dissipation VI = GND to VCC
capacitance
- 3.3 6.5 1.0
7.5
- 4.7 8.5 1.0
9.5
[3] -
12
-
-
-
−40 °C to +125 °C Unit
Min
Max
-
- pF
1.0
8.0 ns
1.0
10.5 ns
-
- pF
[1] Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0 V).
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
11. Waveforms
VI
A, B, C, D,
E, F, G, H
input
GND
VOH
Y output
VOL
VM
tPHL
VM
tPLH
mna491
Fig 6.
Measurement points are given in Table 8.
VOL and VOH are typical voltage output levels that occur with the output load.
Input to output propagation delays
Table 8. Measurement points
Type
74AHC30
74AHCT30
Input
VM
0.5 × VCC
1.5 V
Output
VM
0.5 × VCC
0.5 × VCC
74AHC_AHCT30_3
Product data sheet
Rev. 03 — 26 June 2009
© NXP B.V. 2009. All rights reserved.
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