74AHC30D View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
74AHC30D Datasheet PDF : 16 Pages
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Philips Semiconductors
8-input NAND gate
Product specification
74AHC30; 74AHCT30
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VO
Tamb
DC supply voltage
input voltage
output voltage
operating ambient
temperature
tr,tf (∆t/∆f) input rise and fall rates
CONDITIONS
74AHC
74AHCT
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0 5.0 5.5 4.5 5.0 5.5 V
0
−
5.5 0
−
5.5 V
0
−
VCC 0
−
VCC V
see DC and AC
−40 +25 +85 −40 +25 +85 °C
characteristics per device −40 +25 +125 −40 +25 +125 °C
VCC = 3.3 ±0.3 V
−
−
100 −
−
−
ns/V
VCC = 5 ±0.5 V
−
−
20 −
−
20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
VCC
DC supply voltage
VI
input voltage
IIK
DC input diode current
IOK
DC output diode current
IO
DC output source or sink current
ICC
DC VCC or GND current
Tstg
storage temperature
PD
power dissipation per package
CONDITIONS
VI < −0.5 V; note 1
VO < −0.5 V or VO > VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V
for temperature range from
−40 to +125 °C; note 2
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
500
UNIT
V
V
mA
mA
mA
mA
°C
mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO-packages: above 70 °C the value of PD derates linearly with 8 mW/K.
For TSSOP-packages: above 60 °C the value of PD derates linearly with 5.5 mW/K.
1999 Nov 30
5
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