74AHC1G86GW View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
74AHC1G86GW Datasheet PDF : 12 Pages
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NXP Semiconductors
74AHC1G86; 74AHCT1G86
2-input EXCLUSIVE-OR gate
Table 8. Dynamic characteristics …continued
GND = 0 V; tr = tf = ≤ 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
For type 74AHCT1G86
tpd
propagation A and B to Y
[1]
delay
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
- 3.5 6.9 1.0
8.0
1.0
9.0 ns
CL = 50 pF
- 5.0 7.9 1.0
9.0
1.0
10.5 ns
CPD
power
per buffer;
[4] -
11
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
12. Waveforms
A, B input
Y output
VM
tPHL
VM
Measurement points are given in Table 9.
Fig 5. The input (A and B) to output (Y) propagation delays
Table 9. Measurement points
Type
Input
74AHC1G86
74AHCT1G86
VI
GND to VCC
GND to 3.0 V
VM
0.5 × VCC
1.5 V
tPLH
mna041
Output
VM
0.5 × VCC
0.5 × VCC
74AHC_AHCT1G86_5
Product data sheet
Rev. 05 — 4 July 2007
© NXP B.V. 2007. All rights reserved.
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