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74AHC1G86GW View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
74AHC1G86GW
NXP
NXP Semiconductors. NXP
74AHC1G86GW Datasheet PDF : 12 Pages
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NXP Semiconductors
74AHC1G86; 74AHCT1G86
2-input EXCLUSIVE-OR gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
For type 74AHCT1G86
VIH
HIGH-level VCC = 4.5 V to 5.5 V
input voltage
VIL
LOW-level VCC = 4.5 V to 5.5 V
input voltage
VOH
VOL
II
ICC
ICC
CI
HIGH-level VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 50 µA
IO = 8.0 mA
LOW-level
VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 50 µA
IO = 8.0 mA
input leakage VI = 5.5 V or GND;
current
VCC = 0 V to 5.5 V
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
additional
per input pin; VI = 3.4 V;
supply current other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
input
capacitance
25 °C
40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min
Max
Min
Max
2.0 -
-
2.0
-
2.0
-
V
-
- 0.8
-
0.8
-
0.8 V
4.4 4.5 -
4.4
-
4.4
-
V
3.94 -
-
3.8
-
3.70
-
V
-
0 0.1
-
0.1
-
0.1 V
-
- 0.36 -
0.44
-
0.55 V
-
- 0.1
-
1.0
-
2.0 µA
-
- 1.0
-
10
-
40 µA
-
- 1.35 -
1.5
-
1.5 mA
- 1.5 10
-
10
-
10 pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter Conditions
25 °C
40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
For type 74AHC1G86
tpd
propagation A and B to Y
[1]
delay
VCC = 3.0 V to 3.6 V
[2]
CL = 15 pF
- 4.0 11.0 1.0
13.0
1.0
14.0 ns
CL = 50 pF
- 5.8 14.5 1.0
16.5
1.0
18.5 ns
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
- 3.4 6.8 1.0
8.0
1.0
8.5 ns
CL = 50 pF
- 4.9 8.8 1.0
10.0
1.0
11.5 ns
CPD
power
per buffer;
[4] -
9
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
74AHC_AHCT1G86_5
Product data sheet
Rev. 05 — 4 July 2007
© NXP B.V. 2007. All rights reserved.
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