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74AHC1G86GV View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
74AHC1G86GV
Philips
Philips Electronics Philips
74AHC1G86GV Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
2-input EXCLUSIVE-OR gate
Product specification
74AHC1G86; 74AHCT1G86
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Very small 5-pin package
Output capability: standard
Specified from 40 to +125 °C.
DESCRIPTION
The 74AHC1G/AHCT1G86 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G86 provides the 2-input
EXCLUSIVE-OR function.
QUICK REFERENCE DATA
Ground = 0 V; Tamb = 25 °C; tr = tf 3.0 ns.
SYMBOL
PARAMETER
CONDITIONS
tPHL/tPLH
CI
CPD
propagation delay A and B to Y
input capacitance
power dissipation capacitance
CL = 15 pF; VCC = 5 V
CL = 50 pF; f = 1 MHz;
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
TYPICAL
AHC1G AHCT1G
UNIT
3.4
3.5
ns
1.5
1.5
pF
9
11
pF
2002 Jun 06
2
 

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