Philips Semiconductors
Bilateral switch
Product specification
74AHC1G66; 74AHCT1G66
FEATURES
• Very low ON-resistance:
– 26 Ω (typical) at VCC = 3.0 V
– 16 Ω (typical) at VCC = 4.5 V
– 14 Ω (typical) at VCC = 5.5 V.
• ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• SOT353 and SOT753 package
• Output capability: non standard
• Specified from −40 to +125 °C.
DESCRIPTION
The 74AHC1G/AHCT1G66 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G66 provides an analog switch.
The switch has two input/output pins (Y and Z) and an
active HIGH enable input pin (E). When pin E is LOW, the
analog switch is turned off.
QUICK REFERENCE DATA
Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 3 ns.
SYMBOL
PARAMETER
CONDITIONS
tPZH/tPZL
tPHZ/tPLZ
CI
CPD
CS
turn-on time E to Vos
turn-off time E to Vos
input capacitance
power dissipation capacitance
switch capacitance
CL = 15 pF; RL = 1 kΩ;
VCC = 5 V
CL = 15 pF; RL = 1 kΩ;
VCC = 5 V
CL = 50 pF; f = 10 MHz;
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + ((CL + CS) × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CS = maximum switch capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
TYPICAL
AHC1G AHCT1G
3
3
UNIT
ns
5
5
ns
2
2
pF
13
15
pF
4
4
pF
2002 Jun 06
2