DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

60S10 View Datasheet(PDF) - Shanghai Lunsure Electronic Tech

Part Name
Description
Manufacturer
60S10 Datasheet PDF : 2 Pages
1 2
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
Glass Passivated Chip
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Low Leakage
Maximum Ratings
Operating Junction Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Catalog
Number
60S05
60S1
60S2
60S4
60S6
60S8
60S10
Device
Marking
60S05
60S1
60S2
60S4
60S6
60S8
60S10
Maximum
Reccurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
35V
70V
140V
280V
420V
560V
700V
50V
100V
200V
400V
600V
800V
1000V
60S05
thru
60S10
6 Amp Axial-Lead
Glass Passivated
Rectifier
50 - 1000 Volts
DO-201AD
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
6.0A TA = 100°C
Peak Forward Surge
IFSM
Current
200A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
Maximum DC
VF
1.0V IFM = 6.0A;
TJ = 25°C*
Reverse Current At
IR
5µA TJ = 25°C
Rated DC Blocking
100µA TJ = 100°C
Voltage
Typical Junction
Capacitance
CJ
150pF Measured at
1.0MHz, VR=4.0V
C
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.370
B
---
.250
C
.048
.052
D
1.000
---
MM
MIN
---
---
1.20
25.40
MAX
9.50
6.40
1.30
---
NOTE
*Pulse test: Pulse width 300 µsec, Duty cycle 1%
www.cnelectr.com
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]