60APU06-N3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
60APU06-N3 Datasheet PDF : 9 Pages
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VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V
-
34
Reverse recovery time
trr
TJ = 25 °C
-
81
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
IF = 60 A
-
dIF/dt = 200 A/μs
VR = 200 V
-
-
-
164
7.4
17.0
300
1394
MAX.
45
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
RthJC
RthCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.63
0.2
-
5.5
-
0.2
-
2.4
-
(20)
60EPU06
60APU06
UNITS
K/W
g
oz.
Nm
(lbf  in)
Revision: 15-Aug-11
2
Document Number: 94023
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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