60EPU04-N3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
| 60EPU04-N3 Datasheet PDF : 0 Pages | |||
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
0
0.5
1
1.5
2
2.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
TJ = 25 °C
1000
100
TJ = 175 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
100
200
300
400
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
10
0
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
.
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Aug-11
3
Document Number: 94022
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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