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4N31TVM View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
4N31TVM Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.)
Symbol
Parameter
Device
TOTAL DEVICE
TSTG
Storage Temperature
Non M
M
TOPR
Operating Temperature
Non M
M
TSOL
Lead Solder Temperature
All
PD
Total Device Power Dissipation @ TA = 25°C
All
Derate above 25°C
EMITTER
IF
Continuous Forward Current
All
VR
Reverse Voltage
All
IF(pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
All
PD
LED Power Dissipation @ TA = 25°C
All
Derate above 25°C
DETECTOR
BVCEO Collector-Emitter Breakdown Voltage
All
BVCBO Collector-Base Breakdown Voltage
All
BVECO Emitter-Collector Breakdown Voltage
All
PD
Detector Power Dissipation @ TA = 25°C
All
Derate above 25°C
IC
Continuous Collector Current
All
Value
-55 to +150
-40 to +150
-55 to +100
-40 to +100
260 for 10 sec
250
3.3
80
3
3.0
150
2.0
30
30
5
150
2.0
150
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
mA
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
2
www.fairchildsemi.com
 

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