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27C010 データシートの表示(PDF) - National ->Texas Instruments

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27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM National-Semiconductor
National ->Texas Instruments National-Semiconductor
27C010 Datasheet PDF : 12 Pages
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Functional Description (Continued)
ERASURE CHARACTERISTICS
The erasure characteristics of the device are such that era-
sure begins to occur when exposed to light with wave-
lengths shorter than approximately 4000 Angstroms ( ) It
should be noted that sunlight and certain types of fluores-
cent lamps have wavelengths in the 3000 –4000 range
The recommended erasure procedure for the EPROM is ex-
posure to short wave ultraviolet light which has a wave-
length of 2537 The integrated dose (i e UV intensity X
exposure time) for erasure should be a minimum of 15W-
sec cm2
The EPROM should be placed within 1 inch of the lamp
tubes during erasure Some lamps have a filter on their
tubes which should be removed before erasure
An erasure system should be calibrated periodically The
distance from lamp to device should be maintained at one
inch The erasure time increases as the square of the dis-
tance from the lamp (if distance is doubled the erasure time
increases by factor of 4) Lamps lose intensity as they age
When a lamp is changed the distance has changed or the
lamp has aged the system should be checked to make cer-
tain full erasure is occurring Incomplete erasure will cause
symptoms that can be misleading Programmers compo-
nents and even system designs have been erroneously sus-
pected when incomplete erasure was the problem
SYSTEM CONSIDERATION
The power switching characteristics of EPROMs require
careful decoupling of the devices The supply current ICC
has three segments that are of interest to the system de-
signer the standby current level the active current level
and the transient current peaks that are produced by volt-
age transitions on input pins The magnitude of these tran-
sient current peaks is dependent on the output capacitance
loading of the device The associated VCC transient voltage
peaks can be suppressed by properly selected decoupling
capacitors It is recommended that at least a 0 1 mF ceramic
capacitor be used on every device between VCC and GND
This should be a high frequency capacitor of low inherent
inductance In addition at least a 4 7 mF bulk electrolytic
capacitor should be used between VCC and GND for each
eight devices The bulk capacitor should be located near
where the power supply is connected to the array The pur-
pose of the bulk capacitor is to overcome the voltage drop
caused by the inductive effects of the PC board traces
MODE SELECTION
The modes of operation of the NM27C010 are listed in Table I A single 5V power supply is required in the read mode All inputs
are TTL levels except for VPP and A9 for device signature
TABLE I Modes Selection
Pins
CE
OE
Mode
PGM
VPP
VCC
Outputs
Read
VIL
VIL
X
(Note 1)
X
5 0V
DOUT
Output Disable
X
VIH
X
X
5 0V
High Z
Standby
VIH
X
X
X
5 0V
High Z
Programming
VIL
VIH
VIL
12 75V
6 25V
DIN
Program Verify
VIL
VIL
VIH
12 75V
6 25V
DOUT
Program Inhibit
VIH
X
Note 1 X can be VIL or VIH
X
12 75V
6 25V
High Z
TABLE II Manufacturer’s Identification Code
Pins
A0 A9 O7 O6 O5 O4 O3 O2 O1 O0 Hex
(12) (26) (21) (20) (19) (18) (17) (15) (14) (13) Data
Manufacturer Code VIL 12V 1 0 0 0 1 1 1 1 8F
Device Code
VIH 12V 1 0 0 0 0 1 1 0 86
8
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