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3N165-6 View Datasheet(PDF) - Linear Technology

Part Name
Description
Manufacturer
3N165-6 Datasheet PDF : 3 Pages
1 2 3
MATCHING CHARACTERISTICS 3N165
SYMBOL
Yfs1/Yfs2
VGS1-2
VGS1-2/T
CHARACTERISTICS
Forward Transconductance Ratio
Gate Source Threshold Voltage Differential
Gate Source Threshold Voltage Differential
Change with Temperature
LIMITS
MIN. MAX.
0.90 1.0
-- 100
-- 100
UNITS
mV
µV/°C
CONDITIONS
VDS= -15 V ID= -500 µA
VDS= -15 V ID= -500 µA
VDS= -15 V IA= -500 µA
TA= -55°C to = +25°C
f=1kHz
R2
50
VDD
R1
TYPICAL SWITCHING WAVEFORM
10%
10%
tr
VOUT
t on
90%
10%
INPUT PULSE
Rise Time 2ns
Pulse Width 200ns
Switching Times Test Circuit
Switching Times Test Circuit
10%
toff
SAMPLING SCOPE
Tr 0.2ns
CIN2pF
RIN10M
NOTES:
1. MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static
charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow these procedures:
To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when
being tested or used. Avoid unnecessary handling. Pick up devices by the case instead of the leads. Do not insert or remove
devices from circuits with the power on, as transient voltages may cause permanant damage to the devices.
2. Per transistor.
3. Devices must mot be tested at ±125V more than once, nor for longer than 300ms.
4. For design reference only, not 100% tested.
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress
ratings only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
 

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