2SK655 View Datasheet(PDF) -

Silicon MOS FETs (Small Signal)

2SK655

Silicon N-Channel MOS FET

For switching

s Features

q High-speed switching

q Allowing to supply with the radial taping

4.0±0.2

unit: mm

s Absolute Maximum Ratings (Ta = 25°C)

Parameter

Symbol Ratings

Unit

Drain to Source voltage

Gate to Source voltage

Drain current

Max drain current

Allowable power dissipation

Channel temperature

Storage temperature

VDS

VGSO

ID

IDP

PD

Tch

Tstg

50

V

8

V

100

mA

200

mA

200

mW

150

°C

−55 to +150

°C

marking

123

1.27 1.27

1: Source

2.54±0.15

2: Drain

3: Gate

EIAJ: SC-72

New S Type Package

Internal Connection

D

G

S

s Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain to Source cut-off current IDSS

VDS = 10V, VGS = 0

10

µA

Gate to Source leakage current IGSS

VGS = 8V, VDS = 0

50

µA

Drain to Source breakdown voltage VDSS

ID = 100µA, VGS = 0

50

V

Gate threshold voltage

Vth

ID = 100µA, VDS = VGS

1.5

3.5

V

Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V

50

Ω

Forward transfer admittance

| Yfs |

ID = 20mA, VDS = 5V, f = 1kHz

20

35

mS

Input capacitance (Common Source) Ciss

10

15

pF

Output capacitance (Common Source) Coss

VDS = 5V, VGS = 0, f = 1MHz

4

5

pF

Reverse transfer capacitance (Common Source) Crss

0.5

1

pF

Turn-on time

ton*

VDD = 5V, VGS = 0 to 5V, RL = 200Ω

10

ns

Turn-off time

toff*

VDD = 5V, VGS = 5 to 0V, RL = 200Ω

20

ns

* ton, toff measurement circuit

VGS = 5V

50Ω

Vout 200Ω

Vin

VDD = 5V

Vout

10%

90%

10%

90%

ton

toff

1

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