2SK3113 View Datasheet(PDF) - TY Semiconductor

Part Name

Description

Manufacturer

2SK3113

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

TY Semiconductor 

SMD Type

TraMnOsiSstFIoCErsT

Product specification

2SK3113

Features

Low on-state resistance

RDS(on) = 4.4 MAX. (VGS = 10 V, ID = 1.0 A)

Low gate charge

QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)

Gate voltage rating 30 V

Avalanche capability ratings

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

1 Gate

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation

TC=25

TA=25

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

Symbol

Rating

Unit

VDSS

600

V

VGSS

30

V

ID

2.0

A

Idp *

8.0

A

20

PD

W

1.0

Tch

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate to source cut off voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol

IDSS

IGSS

VGS(off)

Yfs

RDS(on)

Ciss

Coss

Crss

ton

tr

toff

tf

Testconditons

Min Typ Max Unit

VDS=600V,VGS=0

100

A

VGS= 30V,VDS=0

10

A

VDS=10V,ID=1mA

2.5

3.5 V

VDS=10V,ID=1.0A

0.5

S

VGS=10V,ID=1.0A

3.3 4.4

260

pF

VDS=10V,VGS=0,f=1MHZ

60

pF

5

pF

7

ns

ID=1.0A,VGS(on)=10V,VDD=150V,RG=10

2

ns

,RL=10

22

ns

9

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

1 of 1

Share Link: