2SK2595 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SK2595 Datasheet PDF : 14 Pages
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2SK2595
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min. Typ Max. Unit
Test Conditions
Zero gate voltage drain current
IDSS
—
—
10
µA VDS = 12 V, VGS = 0
Gate to source leak current
IGSS
—
—
±5.0
µA VGS = ±10 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.6
—
1.3
V
VDS = 12 V, ID = 6 mA
Input capacitance
Ciss
—
68
—
pF VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance
Coss
—
27
—
pF VDS = 12 V, VGS = 0, f = 1 MHz
Output Power
Pout
5.37
7
—
W VDS = 12 V, IDO = 500 mA,
Drain Efficiency
ηD
50
60
—
% f = 836.5 MHz, Pin = 0.89 W
Main Characteristics
Maximum Channel Power
Dissipation Curve
32
24
16
8
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8
8V
Pulse Test
6
6V
5V
4
4V
2
3V
VGS = 2 V
0
2
4
6
8 10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 12 V
Pulse Test
4
Tc = - 25°C
3
25°C
75°C
2
1
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
10
VDS = 12 V
5 Pulse Test
2
Tc = - 25°C
25°C
1
0.5
75°C
0.2
0.1
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)
Rev.4.00, Feb.14.2005, page 2 of 13
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