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F10V50VX2 View Datasheet(PDF) - Shindengen

Part Name
Description
Manufacturer
F10V50VX2 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
VX-2 Series Power MOSFET
2SK2186 ( F10V50VX2 )
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 500V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Tranconductance
gfs ID = 5A, VDS = 10V
Static Drain-Source On-tate Resistance RDS(ON) ID = 5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 1mA, VDS = 10V
Source-Drain Diode Forwade Voltage
VSD IS = 5A, VGS = 0V
Themal Resistance
θjc junction to case
Total Gate Charge
Qg VDD = 400V, VGS = 10V, ID = 5A
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 10V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 5A, VGS = 10V, RL = 30Ω
Turn-Off Time
toff
Min. Typ. Max. Unit
500
V
250 μA
±0.1
2.4 6.3
S
0.8 1.0 Ω
2.5 3.0 3.5 V
1.5
2.08 /
30
nC
890
70
pF
200
70 110 ns
140 220
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
 

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