2SK1254S View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SK1254S

Silicon N Channel MOS FET

Renesas Electronics 

2SK1254(L), 2SK1254(S)

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Electrical Characteristics

Symbol

VDSS

VGSS

ID

ID(pulse)*1

IDR

Pch*2

Tch

Tstg

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 120

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

IGSS

—

Zero gate voltage drain current

IDSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

resistance

RDS(on)

—

—

Forward transfer admittance

|yfs|

2.4

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body to drain diode forward voltage VDF

—

Body to drain diode reverse recovery trr

—

time

Note: 3. Pulse test

Typ

—

—

—

—

—

0.30

0.35

4.0

420

190

25

5

20

150

45

0.95

160

Ratings

120

±20

3

12

3

20

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Max

—

—

±10

100

2.0

0.40

0.55

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 100 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V *3

ID = 2 A, VGS = 4 V *3

ID = 2 A, VDS = 10 V *3

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 2 A, VGS = 10 V,

RL = 15 Ω

IF = 3 A, VGS = 0

IF = 3 A, VGS = 0,

diF/dt = 50 A/µs

Rev.2.00 Sep 07, 2005 page 2 of 7

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