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2SK1154 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
2SK1154
Renesas
Renesas Electronics Renesas
2SK1154 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1153, 2SK1154
Static Drain to Source on State
Resistance vs. Temperature
5
VGS = 10 V
4 Pulse Test
3A
3
2A
2
ID = 1 A
1
0
–40 0
40 80 120 160
Case Temperature TC (°C)
1,000
Body to Drain Diode Reverse
Recovery Time
500 di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
200
100
50
20
10
0.05 0.1 0.2 0.5 1.0 2
5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
VDD = 100 V
250 V
400
VDS
400 V
16
300
12
VGS
200
8
100
VDD = 400 V
ID = 3 A
4
250 V
100 V
0
0
4
8
12 16 20
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
VDS = 10 V
–25°C
2 Pulse Test TC = 25°C
1.0
75°C
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current ID (A)
1,000
100
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Coss
VGS = 0
f = 1 MHz
10
Crss
1
0
10
20 30
40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V, VDD = 30 V
PW = 2 µs, duty 1 %
200
100
50
td (off)
20
tf
tr
10
td (on)
5
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
 

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