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2SK1152L View Datasheet(PDF) - Renesas Electronics

Part Name2SK1152L Renesas
Renesas Electronics Renesas
DescriptionSilicon N-Channel MOS FET
2SK1152L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Main Characteristics
Power vs. Temperature Derating
30
20
10
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
2.0
15 V
1.6 Pulse Test
1.2
5V
6V
10 V
4.5 V
0.8
4V
0.4
VGS = 3.5 V
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
2A
8
4
1A
ID = 0.5 A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
10
3
1.0
DC
1
100
ms
µs
0.3
Operation (T
0.1
C = 25°C)
0.03
Ta = 25°C
0.01
1
10
2SK1151
2SK1152
100
1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
2.0
VDS = 20 V
1.6
Pulse Test
1.2
0.8
75°C
0.4
–25°C
TC = 25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
100
50
Pulse Test
20
VGS = 10 V
10
5
15 V
2
1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
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