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K1109 데이터 시트보기 (PDF) - NEC => Renesas Technology

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K1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM NEC
NEC => Renesas Technology NEC
K1109 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK1109
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
IDSS
VGS(off)
| yfs1 |
VDS = 5.0 V, VGS = 0 V
VDS = 5.0 V, ID = 1.0 µA
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz
Forward Transfer Admittance
| yfs2 | VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz
Input Capacitance
Ciss
VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz
Noise Voltage
NV See Test Circuit
MIN. TYP. MAX. UNIT
40
600 µA
0.1
1.0 V
350
µS
350
µS
7.0 8.0 pF
1.8 3.0 µV
IDSS RANK
MARKING
IDSS
(µA)
J32
40 to 70
J33
60 to 110
J34
J35
J36
J37
90 to 180
150 to 300 200 to 450 300 to 600
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
R = 1 k
JIS A
NV (r.m.s)
C = 10 pF
2
Data Sheet D15940EJ1V0DS
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