2SK1083-MR View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK1083-MR Datasheet PDF : 2 Pages
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N-channel MOS-FET
60V 0,22Ω 8A 20W
> Characteristics
Typical Output Characteristics
2SK1083-MR
F-III Series
Drain-Source-On-State Resistance vs. Tch
Typical Transfer Characteristics
↑
1
↑
2
↑
3
→ VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
→ Tch [°C]
Typical Forward Transconductance vs. ID
→ VGS [V]
Gate Threshold Voltage vs. Tch
↑
4
↑
5
↑
6
→ ID [A]
Typical Capacitance vs. VDS
→ ID [A]
Typical Input Charge
→ Tch [°C]
Forward Characteristics of Reverse Diode
↑
7
↑
8
↑↑
9
→ VDS [V]
Allowable Power Dissipation vs. TC
↑
10
↑
→ Qg [nC]
Safe operation area
↑
12
→ VSD [V]
Transient Thermal impedance
11
→ Tc [°C]
→ VDS [V]
This specification is subject to change without notice!
t [s] →
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