2SJ493
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.24
VGS = −4 V
0.18
0.12
−10 V
0.06
0
ID = −10 A
−50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A /µs
VGS = 0
100
10
1
−0.1
−1
−10
−100
IF - Diode Current - A
−100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
VGS = −4 V
−10
VGS = 0
−1
−0.1
0
1
2
3
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
td(off)
tf
tr
10 td(on)
1.0
−0.1
VDD = −30 V
VGS = −10 V
RG = 10 Ω
−1
−10
−100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−80
VGS
ID = −16 A
−14
−60
−12
VDD = −48 V
−24 V
−10
−12 V
−40
−8
−6
−20
−4
−2
VDS
0
0
20
40
60
80
QG - Gate Charge - nC
Data Sheet D11265EJ3V0DS00
5