DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

J350 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
J350
Renesas
Renesas Electronics Renesas
J350 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ350
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–10 –10 V
–6 V
–8
–4 V
–3.5 V
–6
–3 V
–4
–2
VGS = –2.5 V
Pulse Test
0
0
–4 –8 –12 –16 –20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Pulse Test
–4
–3
ID = –5 A
–2
–1
–2 A
–1 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–20
–10
–5
–2
–1
–0.5
10 µs
100 µs
OtlihmpisietearadretibDaoyCnisORinpDeSratP(iooWnn)(=Tc10=m25s°(C1)s1homt)s
–0.2
Ta = 25°C
–0.1
–2
–5 –10 –20
–50 –100 –200
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–10
Tc = –25°C
–8
25°C
–6
75°C
–4
–2
VDS = –10 V
Pulse Test
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
VGS = –4 V
0.5
–10 V
0.2
0.1
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current ID (A)
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]