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2SJ244JYTL-E View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
2SJ244JYTL-E
Renesas
Renesas Electronics Renesas
2SJ244JYTL-E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ244
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
ID = –1 A
–0.4
–0.5 A
–0.2
–0.2 A
–0.1 A
0
0
–1
–2 –3
–4
–5
Gate to Source Voltage VGS (V)
2000
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
–0.1 –0.2
di / dt = 10 A / µs
PW = 10 µs
–0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
–25
ID = –4 A
Pulse Test
–20
–5 V
–10
VDD = –10 V –8
–15
VGS
–6
VDS
–10
–4
VDD = –10 V
–5
–2
–5 V
0
0
0
2
4
6
8 10
Gate Charge Qg (nc)
Drain to Source on State Resistance
vs. Temperature
1.0
ID = –1 A
0.8 VGS = –2.5 V
0.6
–0.5 A
–0.5 A
0.4 ID = –1 A
VGS = –4 V
0.2
0
–25 0
Pulse Test
25 50 75 100
Case Temperature Tc (°C)
Switching Time vs. Drain Current
2000
1000
500 tf
td(off)
tr
200
100
td(on)
50
20
–0.1 –0.2
VGS = –4 V, VDD = –10 V
PW = 2 µs, Duty Cycle = 1 %
–0.5 –1 –2 –5 –10
Drain Current ID (A)
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Coss
200
Ciss
100
50
Crss
20
10
–0.1 –0.2
–0.5 –1
VGS = 0
f = 1 MHz
–2 –5 –10
Drain to Source Voltage VDS (V)
Rev.2.00 Sep 07, 2005 page 4 of 6
 

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