DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

2SJ217 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
2SJ217
Renesas
Renesas Electronics Renesas
2SJ217 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ217
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–100
–10 V
–6 V
Pulse Test
–80
–5 V
–60
–4 V
–40
–3 V
–20
VGS = –2 V
0
0
–4 –8 –12 –16 –20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.5
Pulse Test
–2.0
–50 A
–1.5
–1.0
–20 A
–0.5
ID = –10 A
0
0
–2
–4 –6
–8 –10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
–200
–100
–50
–20
Operation in
–10 this area is
PW
= 10 ms (1 shot)
limited by RDS (on)
–5
Ta = 25°C
–2
–1 –2
–5 –10 –20
–50 –100
Drain to Source Voltage VDS (V)
Typical Foward Transfer Characteristics
–50
VDS = –10 V
Pulse Test
–40
Tc = –25°C
–30
25°C
75°C
–20
–10
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
VGS = –4 V
0.02
0.01
0.005
–2
–10 V
–5 –10 –20 –50 –100 –200
Drain Current ID (A)
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]