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2SJ246S View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
Manufacturer
2SJ246S
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SJ246S Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ246 L , 2SJ246 S
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di/dt = 50 A/µs, Ta = 25°C
VGS = 0, Pulse test
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current I DR (A)
10000
5000
Typical Capacitance vs. Drain to
Source Voltage
VGS = 0
f = 1 MHz
2000
1000
500
Ciss
Coss
200
100
0
Crss
–10 –20 –30
Drain to Source Voltage
–40 –50
V DS (V)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
–20
–4
VDS
–40
VDD = –25 V
–10 V –8
–60
VGS
–12
–80
–100
0
I D= –7 A
–8 –16 –24 –32
Gate Charge Qg (nc)
–16
–20
–40
Switching Characteristics
500
VGS = –10 V, PW = 2 µs,
VDD =: –30 V, duty <=1 %
200
td(off)
100
tf
50
tr
20
td(on)
10
5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
 

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