Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

J182 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
J182 Silicon P-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
J182 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2SJ181(L), 2SJ181(S)
Forward Transfer Admittance vs.
Drain Current
2
1000
Body–Drain Diode Reverse
Recovery Time
1
Tc = –25 °C
500
0.5
25 °C
200
0.2
75 °C
100
0.1
50
0.05
0.02
–0.05 –0.1 –0.2 –0.5
Drain Current
V DS = –20 V
Pulse Test
–1 –2 –5
I D (A)
20
di / dt = 100 A / µs
10
VGS = 0, Ta = 25 °C
–0.05 –0.1 –0.2 –0.5 –1 –2 –5
Reverse Drain Current I DR (A)
1000
300
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
100
Coss
30
10
Crss
3
1
0 –10 –20 –30 -40 –50
Drain to Source Voltage V DS (V)
5
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2020  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]