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Part Name
Description
2SJ175 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ175
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
2SJ175 Datasheet PDF : 5 Pages
1
2
3
4
5
2SJ175
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10 µs, duty cycle
≤
1%
2. Value at T
C
= 25°C
Symbol
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
Pch*
2
Tch
Tstg
Ratings
–60
±20
–10
–40
–10
25
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
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