J402 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
J402 Datasheet PDF : 6 Pages
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2SJ402
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ402
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 29 mΩ (typ.)
z High forward transfer admittance
: |Yfs| = 23 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
−60
V
−60
V
±20
V
−30
A
−120
A
100
W
936
mJ
Avalanche current
IAR
Repetitive avalenche energy (Note 3)
EAR
Channel temperature
Tch
Storage temperature range
Tstg
−30
A
10
mJ
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
1.25
°C / W
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 747 μH, RG = 25 Ω,
IAR = −30 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29
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