Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
J380 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
J380
Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
Toshiba
J380 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SJ380
r
th
– t
w
3
1
Duty
=
0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.02
0.03
0.01
Single pulse
0.01
0.005
0.003
10
μ
100
μ
1m
10 m
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
3.57°C/W
100 m
1
10
Pulse width t
w
(s)
Safe Operating Area
−
100
−
50
IC max (pulsed)
*
−
30
ID max (continuous)
−
10
100
μ
s
*
1 ms
*
10 ms
*
−
5
−
3
DC operation
Tc
=
25°C
−
1
−
0.5
*
: Single nonrepetitive
−
0.3
pulse Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
−
0.1
−
1
−
3
−
10
VDSS max
−
30
−
100
Drain-source voltage V
DS
(V)
−
300
E
AS
– T
ch
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
= −
25 V, L
=
2.94 mH
Wave form
Ε
AS
=
1·L·I
2
·
2
⎝⎛⎜⎜
B
VDSS
B
VDSS
−
V
DD
⎟⎟⎠⎞
5
2009-09-29
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]