Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −60 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −2.5 A
VGS = −10 V, ID = −2.5 A
VDS = −10 V, ID = −2.5 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
VDD ≈ −48 V,
Qgs
VGS = −10 V,
ID = −5 A
Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
—
—
IDR = −5 A, VGS = 0 V
Marking
2SJ315
Min Typ. Max Unit
—
—
±10
µA
—
— −100 µA
−60
—
—
V
−0.8
— −2.0
V
— 0.31 0.40
Ω
— 0.21 0.25
1.8
3.0
—
S
—
500
—
—
90
—
pF
—
290
—
—
20
—
—
30
—
ns
—
30
—
—
140
—
—
20
—
—
13
—
nC
—
7
—
Min Typ. Max Unit
—
—
−5
A
—
—
−20
A
—
—
1.5
V
2
2002-06-27