2SJ315 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SJ315

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = −60 V, VGS = 0 V

ID = −10 mA, VGS = 0 V

VDS = −10 V, ID = −1 mA

VGS = −4 V, ID = −2.5 A

VGS = −10 V, ID = −2.5 A

VDS = −10 V, ID = −2.5 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

VDD ≈ −48 V,

Qgs

VGS = −10 V,

ID = −5 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Symbol

IDR

IDRP

VDSF

Test Condition

—

—

IDR = −5 A, VGS = 0 V

Marking

2SJ315

Min Typ. Max Unit

—

—

±10

µA

—

— −100 µA

−60

—

—

V

−0.8

— −2.0

V

— 0.31 0.40

Ω

— 0.21 0.25

1.8

3.0

—

S

—

500

—

—

90

—

pF

—

290

—

—

20

—

—

30

—

ns

—

30

—

—

140

—

—

20

—

—

13

—

nC

—

7

—

Min Typ. Max Unit

—

—

−5

A

—

—

−20

A

—

—

1.5

V

2

2002-06-27

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