2SJ313 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SJ313 Datasheet PDF : 5 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain−source breakdown voltage
Gate−source cut−off voltage (Note 2)
Drain−source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IGSS
V (BR) DSS
VGS (OFF)
VDS (ON)
|Yfs|
Ciss
Coss
Crss
VDS = 0, VGS = ±20 V
ID = −10 mA, VGS = 0
VDS = −10 V, ID = −10 mA
ID = −0.6 A, VGS = −10 V
VDS = −10 V, ID = −0.3 A
VDS = −10 V, VGS = 0, f = 1 MHz
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
O: −0.8~−1.6, Y: −1.4~−2.8
This transistor is the electrostatic-sensitive device.
Please handle with caution.
Marking
2SJ313
Min Typ. Max Unit
―
― ±100 nA
−180 ―
―
V
−0.8 ― −2.8
V
― −1.2 −3.0
V
―
0.7
―
S
― 210 ―
―
90
―
pF
―
45
―
J313
Part No. (or abbreviation code)
Lot No.
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
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