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J312 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
J312 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SJ312
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ312
DCDC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drainsource ON resistance : RDS (ON) = 80 m(typ.)
l High forward transfer admittance : |Yfs| = 8.0 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = 60 V)
l Enhancementmode : Vth = 0.8~2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
Pulse(Note 1)
IDP
14
A
56
Drain power dissipation (Tc = 25°C)
PD
40
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
3.125
83.3
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2002-06-27
 

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