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2SJ304 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
2SJ304 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
IGSS
IDSS
Test Condition
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 5 A
VGS = 10 V, ID = 7 A
VDS = 10 V, ID = 7 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Turnon time
ton
Switching time
Fall time
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs
VDD ≈ −48 V, VGS = 10 V, ID = 14 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 14 A, VGS = 0 V
IDR = 14 A, VGS = 0 V
dIDR / dt = 50 A / µs
Marking
2SJ304
Min Typ. Max Unit
±10
µA
― −100 µA
60
V
0.8
― −2.0
V
130 190
m
80
120
5.0
8.0
S
1200
220
pF
550
20
30
ns
25
100
45
30
nC
15
Min Typ. Max Unit
14
A
56
A
1.7
V
110
ns
0.18
µC
2
2002-06-24
 

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