2SJ200
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Drain cut−off current
Gate leakage current
Drain−source breakdown voltage
Gate−source cut−off voltage
(Note 2)
Drain−source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VGS (OFF)
VDS (ON)
|Yfs|
Ciss
Coss
Crss
VDS = −180 V, VGS = 0
VDS = 0, VGS = ±20 V
ID = −10 mA, VGS = 0
VDS = −10 V, ID = −0.1 A
ID = −6 A, VGS = −10 V
VDS = −10 V, ID = −3 A
VDS = −30 V, VGS = 0, f = 1 MHz
VDS = −30 V, VGS = 0, f = 1 MHz
VDS = −30 V, VGS = 0, f = 1 MHz
―
― −1.0 mA
―
― ±0.5 μA
−180 ―
―
V
−0.8 ― −2.8
V
― −1.5 −5.0
V
―
4.0
―
S
― 1300 ―
― 350 ―
pF
― 200 ―
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification
O: −0.8~−1.6, Y: −1.4~−2.8
This transistor is an electrostatic sensitive device. Please handle with caution.
Marking
2
2006-11-16