2SJ144-GR View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SJ144-GR Datasheet PDF : 4 Pages
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2SJ144
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ144
Audio Frequency Amplifier Applications
Analog Switch Applications
Constant Current Applications
Impedance Converter Applications
Unit: mm
• High breakdown voltage: VGDS = 50 V (min)
• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
• Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
50
V
−10
mA
100
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source on resistance
Input capacitance
Reverse transfer capacitance
Symbol
Test Condition
IGSS
VGS = 30 V, VDS = 0
V (BR) GDS VDS = 0, IG = 100 μA
IDSS
(Note)
VDS = −10 V, VGS = 0
VGS (OFF) VDS = −10 V, ID = −0.1 μA
⎪Yfs⎪
VDS = −10 V, VGS = 0, f = 1 kHz
RDS (ON)
VDS = −10 mV, VGS = 0
IDSS = −5 mA
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
Crss
VDG = −10 V, ID = 0, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
1.0
nA
50
⎯
⎯
V
−1.2
⎯
−14 mA
0.3
⎯
6.0
V
1.0 4.0
⎯
mS
⎯ 270 ⎯
Ω
⎯
18
⎯
pF
⎯
3.6
⎯
pF
Note: IDSS classification Y: −1.2~−3.0 mA, GR (G): −2.6~−6.5 mA, BL (L): −6~−14 mA
Marking
1
2007-11-01
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