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D0662B-Q Ver la hoja de datos (PDF) - Panasonic Corporation

Número de piezacomponentes DescripciónFabricante
D0662B-Q Silicon NPN epitaxial planar type Panasonic
Panasonic Corporation Panasonic
D0662B-Q Datasheet PDF : 3 Pages
1 2 3
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
Features
High collector-emitter voltage (Base open) VCEO
High transition frequency fT
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD0662 VCBO
250
V
(Emitter open)
2SD0662B
400
Collector-emitter voltage 2SD0662 VCEO
200
V
(Base open)
2SD0662B
400
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
70
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
(1.5)
6.9±0.1
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD0662 VCEO IC = 100 µA, IB = 0
200
V
(Base open)
2SD0662B
400
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
Collector-emitter cutoff current (Base open) ICEO VCE = 100 V, IB = 0
Forward current transfer ratio
hFE * VCE = 10 V, IC = 5 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 5 mA
Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz 50
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
V
2
µA
220
1.2
V
MHz
10
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE
30 to 100
60 to 150 100 to 220
Publication date: November 2002
Note) The part numbers in the parenthesis show conventional part number.
SJC00195BED
1
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