2SD2385 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SD2385

Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)

Toshiba 

2SD2385

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)

2SD2385

Power Amplifier Applications

Unit: mm

· High breakdown voltage: VCEO = 140 V (min)

· Complementary to 2SB1556

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Rating

Unit

140

V

140

V

5

V

8

A

0.1

A

120

W

150

°C

−55 to 150

°C

Equivalent Circuit

COLLECTOR

BASE

JEDEC

―

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

≈ 100 Ω

EMITTER

1

2003-02-04

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