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Part Name
Description
2SD2088 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SD2088
Silicon NPN Epitaxial Type (Darlington Power Transistor) Transistor
Toshiba
2SD2088 Datasheet PDF : 0 Pages
2.0
500
250
1.6
I
C
– V
CE
200
185
Common emitter
Ta = 25°C
180
1.2
175
0.8
IB = 170
μ
A
0.4
PC = 0.9 W
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
3
Common emitter
IC/IB = 1000
1
Ta =
−
55°C
25
100
0.6
0.3
0.5
1
3
Collector current I
C
(A)
2SD2088
10000
5000
3000
Common emitter
VCE = 2 V
h
FE
– I
C
1000
500
300
Ta = 100°C
−
55
25
100
50
30
0.01
0.03
0.1
0.3
1
Collector current I
C
(A)
35
I
C
– V
BE
2.0
Common emitter
VCE = 2 V
1.6
1.2
Ta = 100°C
−
55
0.8
25
0.4
0
0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage V
BE
(V)
V
BE (sat)
– I
C
5
Common emitter
IC/IB = 1000
3
Ta =
−
55°C
25
100
1
0.3
0.5
1
3
Collector current I
C
(A)
P
C
– Ta
2.0
1.5
1.0
0.5
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
3
2009-12-21
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