D1985 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
D1985 Datasheet PDF : 2 Pages
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Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1393 and 2SB1393A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
Collector to 2SD1985
60
VCBO
V
base voltage 2SD1985A
80
1.3±0.2
1.4±0.1
Collector to 2SD1985
60
VCEO
V
emitter voltage 2SD1985A
80
0.8±0.1
0.5 +0.2
–0.1
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
5
A
Collector current
IC
Collector power TC=25°C
dissipation
Ta=25°C
PC
3
A
25
W
2
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SD1985
current
2SD1985A
Collector cutoff
2SD1985
current
2SD1985A
Emitter cutoff current
Collector to emitter 2SD1985
voltage
2SD1985A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
200
µA
200
300
µA
300
1
mA
60
V
80
70
250
10
1.8
V
1.2
V
30
MHz
0.5
µs
2.5
µs
0.4
µs
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
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