D1975P View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D1975P Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1975 2SD1975A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A
VBE
Emitter-base voltage
IC=8A ; VCE=5V
ICBO
IEBO
hFE-1
Collector
cut-off current
2SD1975 VCB=180V; IE=0
2SD1975A VCB=200V; IE=0
Emitter cut-off current
VEB=3V; IC=0
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=8A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
hFE-2 classifications
Q
S
P
60-120 80-160 100-200
MIN TYP. MAX UNIT
2.5
V
1.8
V
50
μA
50
μA
20
60
200
20
20
MHz
200
pF
2
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