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Part Name
Description
D1975 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D1975
Silicon NPN Power Transistors
Inchange Semiconductor
D1975 Datasheet PDF : 4 Pages
1
2
3
4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1975 2SD1975A
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CEsat
Collector-emitter saturation voltage I
C
=10A ;I
B
=1A
V
BE
Emitter-base voltage
I
C
=8A ; V
CE
=5V
I
CBO
I
EBO
h
FE-1
Collector
cut-off current
2SD1975 V
CB
=180V; I
E
=0
2SD1975A V
CB
=200V; I
E
=0
Emitter cut-off current
V
EB
=3V; I
C
=0
DC current gain
I
C
=20mA ; V
CE
=5V
h
FE-2
DC current gain
I
C
=1A ; V
CE
=5V
h
FE-3
DC current gain
I
C
=8A ; V
CE
=5V
f
T
Transition frequency
I
C
=0.5A ; V
CE
=5V
C
OB
Collector output capacitance
f=1MHz;V
CB
=10V
h
FE-2
classifications
Q
S
P
60-120 80-160 100-200
MIN TYP. MAX UNIT
2.5
V
1.8
V
50
μ
A
50
μ
A
20
60
200
20
20
MHz
200
pF
2
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