SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1666
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=40V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT
60
V
60
V
6
V
0.6
1.0
V
0.7
1.0
V
100
µA
100
µA
70
280
20
60
pF
8
MHz
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
2