D1795 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D1795 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0
VCE(sat) Collector-emitter saturation voltage IC=7A; IB=70mA
VBE(sat) Base-emitter saturation voltage
IC=7A; IB=70mA
ICBO
Collector cut-off current
VCB=500V; IE=0
ICEO
Collector cut-off current
VCE=400V; IB=0
IEBO
Emitter cut-off current
VEB=12V; IC=0
hFE
DC current gain
IC=7A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;IB1=IB2=70mA,
RL=10Ω;VBB2=4V
Product Specification
2SD1795
MIN TYP. MAX UNIT
400
V
1.5
V
2.0
V
0.1
mA
0.1
mA
100 mA
150
10
MHz
2.0
μs
15
μs
15
μs
2
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