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Part Name
Description
D1776P View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
D1776P
Silicon NPN triple diffusion planar type
Panasonic Corporation
D1776P Datasheet PDF : 3 Pages
1
2
3
Power Transistors
40
35
30
(1)
25
P
C
— Ta
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
20
15
(2)
10
(3)
5
(4)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
V
BE(sat)
— I
C
I
C
/I
B
=40
10
3
1 T
C
=–25˚C
0.3
100˚C
25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current I
C
(A)
t
on
, t
stg
, t
f
— I
C
100
Pulsed t
w
=1ms
Duty cycle=1%
30
I
C
/I
B
=40 (I
B1
=–I
B2
)
V
CC
=50V
10
T
C
=25˚C
t
stg
3
t
f
1
t
on
0.3
0.1
0.03
0.01
0
0.5 1.0 1.5 2.0 2.5
Collector current I
C
(A)
I
C
— V
CE
1.6
T
C
=25˚C
1.4
I
B
=3mA
1.2
2mA
1.0
0.8
1mA
0.8mA
0.6
0.6mA
0.4
0.4mA
0.2mA
0.2
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage V
CE
(V)
2SD1776, 2SD1776A
V
CE(sat)
— I
C
I
C
/I
B
=40
10
3
T
C
=100˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current I
C
(A)
100000
h
FE
— I
C
30000
10000
3000
1000
300
100
T
C
=100˚C
25˚C
–25˚C
V
CE
=4V
30
10
0.01 0.03 0.1 0.3 1 3 10
Collector current I
C
(A)
1000
300
100
f
T
— I
C
V
CE
=12V
f=10MHz
T
C
=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I
C
(A)
Area of safe operation (ASO)
100
Non repetitive pulse
T
C
=25˚C
30
10
I
CP
3
I
C
1
0.3
t=1ms
10ms
DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V
CE
(V)
2
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