D1771P View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
D1771P Datasheet PDF : 3 Pages
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Power Transistors
2SD1771, 2SD1771A
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
Complementary to 2SB1191 and 2SB1191A
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High collector to emitter VCEO
q Large collector power dissipation PC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1771
200
VCBO
V
base voltage 2SD1771A
200
Collector to 2SD1771
150
emitter voltage 2SD1771A
VCEO
180
V
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
Collector current
IC
Collector power TC=25°C
dissipation
Ta=25°C
PC
2
A
1
A
25
W
1.3
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1771
voltage
2SD1771A
Symbol
ICBO
IEBO
VCEO
Conditions
VCB = 200V, IE = 0
VEB = 4V, IC = 0
IC = 5mA, IB = 0
min
typ
max Unit
50
µA
50
µA
150
V
180
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*
hFE2
VBE
VCE(sat)
fT
Cob
IE = 0.5mA, IC = 0
6
VCE = 10V, IC = 100mA
60
VCE = 10V, IC = 300mA
50
VCE = 10V, IC = 300mA
IC = 500mA, IB = 50mA
VCE = 10V, IC = 100mA, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
V
240
1
V
1
V
20
MHz
27
pF
*hFE1 Rank classification
Rank
Q
P
hFE1
60 to 140 100 to 240
1
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