INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1378
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB=B 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 3V
fT
Current-Gain—Bandwidth Product
IE= 50mA; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
80
V
80
V
5
V
0.4
V
0.5 μA
0.5 μA
82
390
120
MHz
10
pF
hFE Classifications
P
Q
R
82-180 120-270 180-390
isc Website:www.iscsemi.cn
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